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date name drawn checked approved d w g . n o . specification device name : type name : spec. no. : date : h04-004-05 2SK3882-01 ms5f5909 ms5f5909 1 / 18 power mosfet sep.-16-2004 checked fuji electric device technology co.,ltd. t h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . t h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d p a r t y n o r u s e d f o r t h e m a n u f a c t u r i n g p u r p o s e s w i t h o u t t h e e x p r e s s w r i t t e n c o n s e n t o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . sep.-16-'04 sep.-16-'04 sep.-16-'04
d w g . n o . h04-004-03 ms5f5909 2 / 18 t h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . t h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d p a r t y n o r u s e d f o r t h e m a n u f a c t u r i n g p u r p o s e s w i t h o u t t h e e x p r e s s w r i t t e n c o n s e n t o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . fuji electric device technology co.,ltd. revised records date classification index content drawn checked checked approved enactment sep.-16 2004
d w g . n o . h04-004-03 ms5f5909 3 / 18 t h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . t h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d p a r t y n o r u s e d f o r t h e m a n u f a c t u r i n g p u r p o s e s w i t h o u t t h e e x p r e s s w r i t t e n c o n s e n t o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . fuji electric device technology co.,ltd. 1.scope this specifies fuji power mosfet 2sk3 882 -01 2.construction n-channel enhancement mode power mosfet 3.applications for switching 4.outview to- 247 outview see to 8/ 18 page 5.absolute maximum ratings at tc=25 ? c (unless otherwise specified) description symbol characteristics unit remarks v ds 150 v v dsx 150 v vgs=- 30v continuous drain current i d a pulsed drain current i dp 400 a gate-source voltage v gs 30 v i ar 100 a e as mj e ar mj maximum drain-source dv/dt dv ds /dt kv/ ? s peak diode recovery dv/dt dv/dt kv/ ? s t c = 2 5 c 2.50 t a = 2 5 c operating and storage t ch 150 ? c temperature range t stg -55 to +150 ? c 6.electrical characteristics at tc=25 ? c (unless otherwise specified) static ratings description symbol conditions min. typ. max. unit drain-source i d =250 ? a breakdown voltage bv dss v gs =0v 150 - - v gate threshold i d =250 ? a voltage v gs (th) v ds =v gs 3.0 - 5.0 v zero gate voltage v ds = 15 0v v gs =0v t ch =25 ? c - - 25 drain current i dss v ds = 12 0v v gs =0v t ch =125 ? c - - 250 gate-source v gs = 3 0 v leakage current i gss v ds =0v - - 100 na drain-source i d = 50 a on-state resistance r ds (on) v gs =10v - 12.3 16 m ? 100 drain-source voltage ? a maximum power dissipation p d 600 w r epetitive and non-repetitive maximum avalanche current note *1 n on-repetitive maximum avalanche energy 3478.2 n ote *2 5 n ote *4 r epetitive maximum avalanche energy 60 n ote *3 20 vds ? 150v
d w g . n o . h04-004-03 ms5f5909 4 / 18 t h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . t h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d p a r t y n o r u s e d f o r t h e m a n u f a c t u r i n g p u r p o s e s w i t h o u t t h e e x p r e s s w r i t t e n c o n s e n t o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . fuji electric device technology co.,ltd. dynamic ratings description symbol conditions min. typ. max. unit forward i d = 50 a transconductance g fs v ds = 25v 12 24 - s input capacitance ciss v ds = 75 v - 6500 9750 output capacitance coss v gs =0v - 935 1400 reverse transfer f=1mhz 54 81 pf capacitance crss - td(on) v cc = 48 v - 56 84 turn-on time tr v gs =10v - 150 225 td(off) i d = 50 a - 104 156 ns turn-off time tf r gs =10 ? - 44 66 t otal gate charge q g v cc = 75 v - 140 210 g ate-source charge q gs i d = 100 a - 52 78 n c g ate-drain charge q gd v gs =1 0 v - 46 69 reverse diode description symbol conditions min. typ. max. unit diode forward i f = 100 a on-voltage v sd v gs =0v t ch =25 ? c - 1.2 1.5 v reverse recovery i f = 100 a time trr v gs =0v - 250 - ns reverse recovery -di/dt=100a/ ? s charge qrr t ch =25 ? c - 2.0 - ? c 7.thermal resistance description symbol min. typ. max. unit channel to case rth(ch-c) 0.208 ? c/w channel to ambient rth(ch-a) 50 ? c/w note *1 : tch ? 150 ? c, see fig.1 and fig.2 note *2 : starting tch=25 ? c,i as =40a,l=3.19mh,vcc=48v,r g =50 ? ,see fig.1 and fig.2 e as limited by maximum channel temperature and avalanche curren t. see to the 'avalanche energy' graph of page 17/18. note * 3 : repetitive rating : pulse width limited by maximum channel temperature. see to the 'transient thermal impedance' graph of page 18/18. note *4 : i f ? -i d ,-di/dt=50a/ ? s,vcc ? bv dss ,tch ? 150 ? c
d w g . n o . h04-004-03 ms5f5909 5 / 18 t h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . t h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d p a r t y n o r u s e d f o r t h e m a n u f a c t u r i n g p u r p o s e s w i t h o u t t h e e x p r e s s w r i t t e n c o n s e n t o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . fuji electric device technology co.,ltd. fig.1 test circuit fig.2 operating waveforms 50 ?? d.u.t l vcc -15v 0 bv dss idp v gs i d v ds +10v
d w g . n o . h04-004-03 ms5f5909 6 / 18 t h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . t h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d p a r t y n o r u s e d f o r t h e m a n u f a c t u r i n g p u r p o s e s w i t h o u t t h e e x p r e s s w r i t t e n c o n s e n t o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . fuji electric device technology co.,ltd. 8.reliability test items all guaranteed values are under the categories of reliability per non-assembled(only mosfets). each categories under the guaranteed reliability conform to eiaj ed4701 b101a standards. test items required without fail : test method b-121,b-122,b-123,b-131,b-141 h u m i d i f i c a t i o n t r e a t m e n t ( 8 5 2 c , 6 5 5 % r h , 1 6 8 2 4 h r ) heat treatment of soldering ( solder dipping , 260 5 c(265 cmax.),10 1sec,2 times) tes t tes t tes ting methods and conditions referenc e sampling ac ceptanc e no. items standard number number eiaj ed4701 1 terminal pull forc e strength to-220,to-220f : 10n (tensile) to-3p,to-3pf,to-247 : 25n a-111a 15 to-3pl : 45n method 1 t-pack ,k-pac k : 10n f o r c e m a i n t a i n i n g d u r a t i o n : 3 0 5 s e c 2 terminal load forc e strength to-220,to-220f : 5n (bending) to-3p,to-3pf,to-247 : 10n a-111a 15 to-3pl : 15n method 3 t-pack ,k-pac k : 5n number of times :2times (90deg./time) 3 mounting screwing torque value: (m3) (0:1) strength t o - 2 2 0 , t o - 2 2 0 f : 4 0 1 0 n c m a-112 15 t o - 3 p , t o - 3 p f , t o - 2 4 7 : 5 0 1 0 n c m method 2 t o - 3 p l : 7 0 1 0 n c m 4 vibration frequenc y : 100hz to 2k hz acc eleration : 100m/s 2 a-121 15 sweeping time : 20min./1 c yc le test c ode c 6times for each x,y&z directions. 5 shock peak amplitude: 15km/s 2 a-122 duration time : 0.5ms test c ode d 15 3times for each x,y&z directions. 6 solderability solder temp. : 235 ? 5 ? c immersion time : 5 ? 0.5sec a-131a eac h terminal shall be immers ed in test c ode a 15 the s older bath within 1 to 1.5mm from the body. 7 res is tance to solder temp. : 260 ? 5 ? c soldering heat immersion time : 10 ? 1sec a-132 15 number of times : 2times m e c h a n i c a l t e s t m e t h o d s
d w g . n o . h04-004-03 ms5f5909 7 / 18 t h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . t h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d p a r t y n o r u s e d f o r t h e m a n u f a c t u r i n g p u r p o s e s w i t h o u t t h e e x p r e s s w r i t t e n c o n s e n t o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . fuji electric device technology co.,ltd. failure criteria symbols unit lower limit upper limit breakdown voltage bvdss lsl * 1.0 ----- v zero gate voltage drain-source current idss ----- usl * 2 a gate-source leakage current igss ----- usl * 2 a gate threshold voltage vgs(th) lsl * 0.8 usl * 1.2 v drain-source on-state resistance rds(on) ----- usl * 1.2 ? forward transconductance gfs lsl * 0.8 ----- s diode forward on-voltage vsd ----- usl * 1.2 v marking soldering ----- with eyes or microscope ----- and other damages * lsl : lower specification limit * usl : upper specification limit * before any of electrical characteristics measure, all testing related to the humidity h a v e c o n d u c t e d a f t e r d r y i n g t h e p a c k a g e s u r f a c e f o r m o r e t h a n a n h o u r a t 1 5 0 c . item failure criteria e l e c t r i c a l c h a r a c t e r i s t i c s o u t v i e w tes t tes t tes ting m ethods and conditions referenc e s ampling ac ceptanc e no. item s s tandard number number e ia j ed4701 1 high tem p. t e m p e r a t u r e : 1 5 0 + 0 / - 5 c b -111a 22 s torage tes t duration : 1000hr 2 low temp. t e m p e r a t u r e : - 5 5 + 5 / - 0 c b -112a 22 s torage tes t duration : 1000hr 3 tem perature t e m p e r a t u r e : 8 5 2 c b -121a hum idity r e l a t i v e h u m i d i t y : 8 5 5 % test c ode c 22 s torage tes t duration : 1000hr 4 tem perature t e m p e r a t u r e : 8 5 2 c hum idity r e l a t i v e h u m i d i t y : 8 5 5 % b -122a 22 b ia s b ias v oltage : v d s (max) * 0.8 test c ode c tes t duration : 1000hr 5 uns aturated t e m p e r a t u r e : 1 3 0 2 c (0:1) p res suriz ed r e l a t i v e h u m i d i t y : 8 5 5 % b -123a 22 v apor v apor pres sure : 230k pa test c ode c tes t duration : 48hr 6 tem perature high temp.side : 150 ? 5 ? c cyc le low temp.side : -55 ? 5 ? c b -131a 22 duration time : ht 30m in,lt 30min test c ode a num ber of cy cles : 100cy cles 7 thermal shoc k fluid : pure water(running water) high temp.side : 100+0/-5 ? c b -141a 22 low temp.side : 0+5/-0 ? c test c ode a duration time : ht 5min,lt 5min num ber of cy cles : 100cy cles 1 intermittent t a=25 ? 5 ? c operating ? tc=90degree d-322 22 life t ch ? t ch(max.) tes t duration : 3000 c yc le 2 htrb t e m p e r a t u r e : 1 5 0 + 0 / - 5 c (gate-s ourc e) b ias v oltage : v gs (max) d-323 22 (0:1) tes t duration : 1000hr 3 htrb t e m p e r a t u r e : 1 5 0 + 0 / - 5 c (drain-s ourc e) b ias v oltage : v d s (max) d-323 22 tes t duration : 1000hr c l i m a t i c t e s t m e t h o d s t e s t f o r f e t
d w g . n o . h04-004-03 ms5f5909 8 / 18 t h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . t h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d p a r t y n o r u s e d f o r t h e m a n u f a c t u r i n g p u r p o s e s w i t h o u t t h e e x p r e s s w r i t t e n c o n s e n t o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . fuji electric device technology co.,ltd.
d w g . n o . h04-004-03 ms5f5909 9 / 18 t h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . t h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d p a r t y n o r u s e d f o r t h e m a n u f a c t u r i n g p u r p o s e s w i t h o u t t h e e x p r e s s w r i t t e n c o n s e n t o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . fuji electric device technology co.,ltd. 9. cautions although fuji electric is continually improving product quality and reliability, a small percentage of semiconductor products may become faulty. when using fuji electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing physical injury, fire, or other problem in case any of the products fail. it is recommended to make your design fail-safe, flame retardant, and free of malfunction. the products described in this specification are intended for use in the following electronic and electrical equipment which has normal reliability requirements. computers oa equipment communications equipment(terminal devices) machine tools av equipment measurement equipment personal equipment industrial robots electrical home appliances etc. the products described in this specification are not designed or manufactured to be used in equipment or systems used under life-threatening situations. if you are considering using these products in the equipment listed below, first check the system construction and required reliability, and take adequate safety measures such as a backup system to prevent the equipment from malfunctioning. backbone network equipment transportation equipment (automobiles, trains, ships, etc.) traffic-signal control equipment gas alarms, leakage gas auto breakers submarine repeater equipment burglar alarms, fire alarms, emergency equipment medical equipment nuclear control equipment etc. do not use the products in this specification for equipment requiring strict reliability such as(but not limited to): aerospace equipment aeronautical equipment 10. warnings the mosfets should be used in products within their absolute maximum rating(voltage, current, temperature, etc.). the mosfets may be destroyed if used beyond the rating. we only guarantee the non-repetitive and repetitive avalanche capability and not for the continuous avalanche capability which can be assumed as abnormal condition .please note the device may be destructed from the avalanche over the specified maximum rating. the equipment containing mosfets should have adequate fuses or circuit breakers to prevent the equipment from causing secondary destruction (ex. fire, explosion etc...). use the mosfets within their reliability and lifetime under certain environments or conditions. the mosfets may fail before the target lifetime of your products if used under certain reliability conditions. be careful when handling mosfets for esd damage. (it is an important consideration.) w h e n h a n d l i n g m o s f e t s , h o l d t h e m b y t h e c a s e ( p a c k a g e ) a n d d o n t t o u c h t h e l e a d s a n d t e r m i n a l s . it is recommended that any handling of mosfets is done on grounded electrically conductive floor and tablemats.
d w g . n o . h04-004-03 ms5f5909 10 / 18 t h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . t h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d p a r t y n o r u s e d f o r t h e m a n u f a c t u r i n g p u r p o s e s w i t h o u t t h e e x p r e s s w r i t t e n c o n s e n t o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . fuji electric device technology co.,ltd. before touching a mosfet terminal, discharge any static electricity from your body and clothes by grounding out through a high impedance resistor (about 1m ? ) when soldering, in order to protect the mosfets from static electricity, ground the soldering iron or soldering bath through a low impedance resistor. you must design the mosfets to be operated within the specified maximum ratings(voltage, current, temperature, etc.) to prevent possible failure or destruction of devices. consider the possible temperature rise not only for the channel and case, but also for the outer leads. do not directly touch the leads or package of the mosfets while power is supplied or during operation in order to avoid electric shock and burns. the mosfets are made of incombustible material. however, if a mosfet fails, it may emit smoke or flame. also, operating the mosfets near any flammable place or material may cause the mosfets to emit smoke or flame in case the mosfets become even hotter during operation. design the arrange- ment to prevent the spread of fire. the mosfets should not used in an environment in the presence of acid, organic matter, or corrosive gas(hydrogen sulfide, sulfurous acid gas etc.) the mosfets should not used in an irradiated environment since they are not radiation-proof. installation soldering involves temperatures which exceed the device storage temperature rating. to avoid device damage and to ensure reliability, observe the following guidelines from the quality assurance standard. solder temperature and duration (through-hole package) solder temperature duration 260 ? 5 ? c 10 ? 1 seconds 350 ? 10 ? c 3.5 ? 0.5 seconds the immersion depth of the lead should basically be up to the lead stopper and the distance should be a maximum of 1.5mm from the device. when flow-soldering, be careful to avoid immersing the package in the solder bath. refer to the following torque reference when mounting the device on a heat sink. excess torque applied to the mounting screw causes damage to the device and weak torque will increase the thermal resis- tance, both of which conditions may destroy the device. table 1 : recommended tightening torques. package style screw t ightening torques note to - 220 to - 220f m3 30 C 50 ncm to - 3p to - 3pf to - 247 m3 40 C 60 ncm to - 3pl m3 60 C 80 ncm fla tness : < 3 0 ? m roughness : < 10 ? m plane off the edges : c< 1.0mm
d w g . n o . h04-004-03 ms5f5909 11 / 18 t h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . t h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d p a r t y n o r u s e d f o r t h e m a n u f a c t u r i n g p u r p o s e s w i t h o u t t h e e x p r e s s w r i t t e n c o n s e n t o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . fuji electric device technology co.,ltd. t h e h e a t s i n k s h o u l d h a v e a f l a t n e s s w i t h i n 3 0 ? m and roughness within 10 ? m. also, keep the tighten- ing torque within the limits of this specification. improper handling may cause isolation breakdown leading to a critical accident. ex.) over plane off the edges of screw hole. (recommended plane off the edge is c<1.0mm) we recommend the use of thermal compound to optimize the efficiency of heat radiation. it is important to evenly apply the compound and to eliminate any air voids. storage the mosfets must be stored at a standard temperature of 5 to 35 ? c and relative humidity of 45 to 75%. if the storage area is very dry, a humidifier may be required. in such a case, use only deionized water or boiled water, since the chlorine in tap water may corrode the leads. the mosfets should not be subjected to rapid changes in temperature to avoid condensation on the surface of the mosfets. therefore store the mosfets in a place where the temperature is steady. the mosfets should not be stored on top of each other, since this may cause excessive external force on the case. the mosfets should be stored with the lead terminals remaining unprocessed. rust may cause presoldered connections to fail during later processing. the mosfets should be stored in antistatic containers or shipping bags. 11.appendix these products do not contain pbbs (polybrominated biphenyl) or pbdes (polybrominated diphenyl ether ). t h e s e p r o d u c t s d o n o t c o n t a i n c l a s s - i o d s a n d c l a s s - i i o d s o f c l e a n a i r a c t o f u s . if you have any questions about any part of this specification, please contact fuji electric or its sales agent before using the product. neither fuji nor its agents shall be held liable for any injury caused by using the products not in accordance with the instructi ons. the application examples described in this specification are merely typical uses of fuji e lectric products. this specification does not confer any industrial property rights or other rights, nor constitute a license for such rights.
d w g . n o . h04-004-03 ms5f5909 12 / 18 t h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . t h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d p a r t y n o r u s e d f o r t h e m a n u f a c t u r i n g p u r p o s e s w i t h o u t t h e e x p r e s s w r i t t e n c o n s e n t o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . fuji electric device technology co.,ltd. 0 25 50 75 100 125 150 0 100 200 300 400 500 600 700 800 allowable power dissipation pd=f(tc) p d [ w ] tc [ ? c] 0 5 10 0 20 40 60 80 100 120 140 160 7v 20v 10v 8v 6.5v vgs=6.0v i d [ a ] vds [v] typical output characteristics id=f(vds):80 ? s pulse test,tch=25 ? c
d w g . n o . h04-004-03 ms5f5909 13 / 18 t h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . t h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d p a r t y n o r u s e d f o r t h e m a n u f a c t u r i n g p u r p o s e s w i t h o u t t h e e x p r e s s w r i t t e n c o n s e n t o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . fuji electric device technology co.,ltd. 0 1 2 3 4 5 6 7 8 9 10 0.1 1 10 100 i d [ a ] vgs[v] typical transfer characteristic id=f(vgs):80 ? s pulse test,vds=25v,tch=25 ? c 0.1 1 10 100 0.1 1 10 100 g f s [ s ] id [a] typical transconductance gfs=f(id):80 ? s pulse test,vds=25v,tch=25 ? c
d w g . n o . h04-004-03 ms5f5909 14 / 18 t h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . t h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d p a r t y n o r u s e d f o r t h e m a n u f a c t u r i n g p u r p o s e s w i t h o u t t h e e x p r e s s w r i t t e n c o n s e n t o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . fuji electric device technology co.,ltd. 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 0.00 0.02 0.04 0.06 r d s ( o n ) [ ? ] id [a] typical drain-source on-state resistance rds(on)=f(id):80 ? s pulse test,tch=25 ? c 10v 20v 8v 7v 6.5v vgs=6v -50 -25 0 25 50 75 100 125 150 0.00 0.02 0.04 0.06 0.08 0.10 r d s ( o n ) [ ? ] tch [ ? c] typ. max. drain-source on-state resistance rds(on)=f(tch):id=50a,vgs=10v
d w g . n o . h04-004-03 ms5f5909 15 / 18 t h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . t h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d p a r t y n o r u s e d f o r t h e m a n u f a c t u r i n g p u r p o s e s w i t h o u t t h e e x p r e s s w r i t t e n c o n s e n t o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . fuji electric device technology co.,ltd. -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 max. min. gate threshold voltage vs. tch vgs(th)=f(tch):vds=vgs,id=250 ? a v g s ( t h ) [ v ] tch [ ? c] 0 50 100 150 200 250 0 2 4 6 8 10 12 14 qg [nc] typical gate charge characteristics vgs=f(qg):id=100a,tch=25 ? c v g s [ v ] 120v 75v vcc= 30v
d w g . n o . h04-004-03 ms5f5909 16 / 18 t h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . t h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d p a r t y n o r u s e d f o r t h e m a n u f a c t u r i n g p u r p o s e s w i t h o u t t h e e x p r e s s w r i t t e n c o n s e n t o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . fuji electric device technology co.,ltd. 10 -1 10 0 10 1 10 2 10 3 10 0 10 1 10 2 10 3 10 4 c [ p f ] vds [v] typical capacitance c=f(vds):vgs=0v,f=1mhz crss coss ciss 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0.1 1 10 100 1000 i f [ a ] vsd [v] typical forward characteristics of reverse diode if=f(vsd):80 ? s pulse test,tch=25 ? c
d w g . n o . h04-004-03 ms5f5909 17 / 18 t h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . t h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d p a r t y n o r u s e d f o r t h e m a n u f a c t u r i n g p u r p o s e s w i t h o u t t h e e x p r e s s w r i t t e n c o n s e n t o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . fuji electric device technology co.,ltd. 10 -1 10 0 10 1 10 2 10 3 10 0 10 1 10 2 10 3 10 4 typical switching characteristics vs. id t=f(id):vcc=48v,vgs=10v,rg=10 ? td(on) tr tf td(off) t [ n s ] id [a] 0 25 50 75 100 125 150 0 500 1000 1500 2000 2500 3000 3500 i as =40a i as =60a i as =100a e a v [ m j ] starting tch [ ? c] maximum avalanche energy vs. starting tch e(av)=f(starting tch):vcc=48v,i(av)<=100a
d w g . n o . h04-004-03 ms5f5909 18 / 18 t h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . t h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t , o r d i s c l o s e d i n a n y w a y w h a t s o e v e r f o r t h e u s e o f a n y t h i r d p a r t y n o r u s e d f o r t h e m a n u f a c t u r i n g p u r p o s e s w i t h o u t t h e e x p r e s s w r i t t e n c o n s e n t o f f u j i e l e c t r i c d e v i c e t e c h n o l o g y c o . , l t d . fuji electric device technology co.,ltd. 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -2 10 -1 10 0 10 1 10 2 single pulse maximum avalanche current pulsewidth i av =f(t av ):starting tch=25 ? c,vcc=48v a v a l a n c h e c u r r e n t i a v [ a ] t av [sec] 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -3 10 -2 10 -1 10 0 10 1 transient thermal impedance zth(ch-c)=f(t):d=0 z t h ( c h - c ) [ ?? / w ] t [sec]

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